By controlling the light wave-form of Xe lamp with insulated gate bipolar transistor ( IGBT) and using the periodic long-pulse chopper technology, a long pulsed medical Nd: YAG laser was designed.

1、

Combined with the design of brushless DC electric motor controller, a method to estimate power loss of IGBT ( Insulated Gate Bipolar Transistor) based on PSPICE simulation is proposed.

结合无刷直流电机控制器的设计，提出了基于PSPICE仿真的绝缘栅双极型晶体管IGBT（Insulated Gate Bipolar Transistor）功率损耗的估算方法。

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2、

Then the voltage unbalance between the inner and outer IGBTs of the Neutral Point Clamping ( NPC) three level converter is analyzed on basis of this model.

根据这个模型，分析了中点箝位式（NPC）三电平变流器中内外绝缘栅双极型晶体管（IGBT）电压不平衡的原因。

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3、

The implementation of this method is also studied. Simulation model of IGBT ( Insulated Gate Bipolar Transistor) series resonant inverter based on MATLAB/ Simulink is established.

以MATLAB／Simulink为仿真工具，建立了以IGBT（绝缘栅双极型晶体管）为开关器件的串联型逆变器仿真模型，对提出的定角控制方法进行了仿真验证。

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4、

The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。

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5、

A method to simulate the characteristics of insulated gate bipolar transistor ( IGBT) with PSPICE program is proposed in this paper.

提出了一种用PSPICE程序模拟绝缘栅双极型晶体管（IGBT）特性的方法。

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6、

The heat-ing power controller outputs PWM signals to control the IGBT inverter, which outputs alternating cur-rent. Pipeline is heated under the skin effect.

通过伴热电源控制器输出脉宽调制（PWM）信号，控制绝缘栅双极性晶体管（IGBT）逆变电路输出方波交流电，利用集肤效应原理对管道进行伴热。

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7、

In recent years the Insulated Gate Bipolar Transistor ( IGBT) has been widely used in modern power electronic technology.

近些年，绝缘栅双极型晶体管（IGBT）在现代电力电子技术中应用广泛。

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8、

The system adopted insulated gate bipolar transistor ( IGBT) as its main circuit and pulse-width modulating ( PWM) technology.

该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。

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9、

The light HVDC transmission is a new power transmission technology based on the voltage source converters ( VSCs) and IGBT power semiconductors.

轻型高压直流输电是在电压源换流器和绝缘栅双极晶体管基础上开发出来的一种新型输电技术。

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10、

Analysis of voltage-current characteristics of LIGBT

横向绝缘栅双极晶体管的电压电流特性分析

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11、

Research on Electrical Overstress on IGBT Module

绝缘栅双极晶体管模块过电应力的研究

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12、

The Basic Research of Alumina Based Self-Flow Castable

刚玉自流浇注料的基础研究绝缘栅双极晶体管基础

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13、

The inverter can be manufactured with the insulation gate bipolar transistor module.

逆变器采用绝缘栅双极晶体管模块制造。

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14、

A Controlled Hole Injection Lateral Insulated Gate Bipolar Transistor

空穴注入控制型横向绝缘栅双极晶体管

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15、

Demonstration of Insulated Gate Bipolar Transistor ICs with Drive Protection

绝缘栅双极晶体管驱动保护集成电路设计

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16、

Transient Turn-off Fast Relaxation of Complementary Lateral Insulated-Gate Bipolar Transistor

互补型横向绝缘栅双极晶体管的截止瞬态快速弛豫

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17、

An analysis is made on the difference between the wide base, low gain PNP transistors in the IGBT and the conventional high gain PNP transistors. It is shown that the operating characteristics of the IGBT should be described with the ambipolar transport theory.

对绝缘栅双极晶体管（IGBT）中宽基区、低增益pnp晶体管与普通高增益晶体管之间的差异进行了综合分析，结果表明，IGBT的工作特性必须采用双极传输理论来描述。

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18、

He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor ( SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process.

研制出He离子注入局域寿命控制SOI横向绝缘栅双极晶体管（SOI－LIGBT），有效地提高了器件的关断速度，且与集成电路工艺相兼容。

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19、

A new network model for the complementary lateral insulated-gate bipolar transistor CLIGBT is presented in this paper.

本文提出互补横向绝缘栅双极晶体管CLIGBT的一种网络模型。

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20、

An analysis of the characteristics of IGBT is made in this paper A wide base, low gain PNP, transistor is contained in IGBT, so the ambipolar transport theory is used to analyse the characteristics of IGBT.

对绝缘栅双极晶体管（IGBT）的工作特性进行了理论分析。由于IGBT所含的PNP晶体管是宽基区、低增益的，因此在分析其工作特性时用了双极传输理论。

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