insulated gate

A Controlled Hole Injection Lateral Insulated Gate Bipolar Transistor

空穴注入控制型横向绝缘栅双极晶体管

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He ion implantation localized lifetime control SOI lateral insulated gate bipolar transistor ( SOI-LIGBT) is proposed in this paper, which can effectively raise the turn-off speed of devices, which is compatibles with integrated circuit process.

研制出He离子注入局域寿命控制SOI横向绝缘栅双极晶体管（SOI－LIGBT），有效地提高了器件的关断速度，且与集成电路工艺相兼容。

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Insulated Gate Bipolar Transistor ( IGBT ) as controllable switch, has been applied widely.

绝缘栅双极二级管 ( IGBT ) 作为一种可控开关, 获得了广泛应用.

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VSC-HVDC system is a new type of HVDC technology, including voltage sourced converter ( VSC) and insulated gate bipolar transistor ( IGBT).

VSC-HVDC系统是一种基于电压源换流器（VSC）和串联绝缘栅双极晶体管（IGBT）的新型直流输电技术。

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By controlling the light wave-form of Xe lamp with insulated gate bipolar transistor ( IGBT) and using the periodic long-pulse chopper technology, a long pulsed medical Nd: YAG laser was designed.

运用绝缘栅双极型晶体管（IGBT）对泵浦氙灯进行斩波放电，并采用间歇式长脉冲斩波技术，设计了一套能发射和控制长脉冲激光的Nd：YAG激光器。

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A method to simulate the characteristics of insulated gate bipolar transistor ( IGBT) with PSPICE program is proposed in this paper.

提出了一种用PSPICE程序模拟绝缘栅双极型晶体管（IGBT）特性的方法。

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In recent years the Insulated Gate Bipolar Transistor ( IGBT) has been widely used in modern power electronic technology.

近些年，绝缘栅双极型晶体管（IGBT）在现代电力电子技术中应用广泛。

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The high speed insulated gate bipolar transistor ( IGBT) transport model is derived by ambipolar transport theory in this paper.

借助双极传输理论导出了高速绝缘栅双极晶体管（IGBT）传输特性的物理模型。

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The paper expounds MOS system power element's characters, insulated gate bipolar transistor and integration type power element's technology and its applications.

本文阐述了MOS系列功率器件的特性、绝缘栅双极型晶体管和集成型功率器件技术，以及它们的应用。

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The prototype of UPFC ( unified power flow controller) is realized by using two identical back to back converters, in which the switch components are IPMs ( intelligent power modules) consisting of IGBTs ( insulated gate bipolar thyristors).

文中用两个统一格式的背靠背逆变器实现了统一潮流控制器物理模型，开关元件采用绝缘栅双极型晶闸管构成的智能功率模块。

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unified description about working principle of insulated gate field-effect transistor

绝缘栅场效应管工作原理的统一表述

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IGBT ( Insulated Gate Bipolar Transistor) is the main switch power device in the power electronics. Due to the fast switching speed and low dropout voltage, it is widely used in power electronic devices.

IGBT（绝缘栅控双极型晶体管）是电力电子技术中的主流开关功率器件，由于开通／关断速度快、通态压降小等优点，在电力电子装置中得到广泛的应用。

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Gate turn of-thyristor chopper of static auxiliary system of metro No 1 is replaced by high voltage insulated gate bipolar transistor ( HVIGBT) chopper, which is presented in this article, to realize the home manufacture of static auxiliary system.

阐述了在地铁一号线车辆静止辅助系统中采用高压绝缘栅双极型晶体管（HVIGBT）斩波器替代门极可关断晶闸管（GT0）斩波器，以实现静止辅助系统的国产化。

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The implementation of this method is also studied. Simulation model of IGBT ( Insulated Gate Bipolar Transistor) series resonant inverter based on MATLAB/ Simulink is established.

以MATLAB／Simulink为仿真工具，建立了以IGBT（绝缘栅双极型晶体管）为开关器件的串联型逆变器仿真模型，对提出的定角控制方法进行了仿真验证。

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when a voltage is applied to the insulated gate terminal, a current is enabled to flow from the drain to the source.

当一个电压到绝缘门终端，使电流流动的排水的来源。

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Full-bridge dual inverter configuration is adopted by main circuit which is supplied by single power source. IGBT ( insulated gate bipolar transistor) is comparatively chosen as switch component to perform energy transfer and power conversion.

电源主电路是单电源供电，采用输出功率较大的全桥双逆变结构，比较地选取绝缘栅双极型晶体管IGBT作为主控开关功率转换器件。

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The recent development of pulse modulator is to use solid-state switches such as IGBT ( Insulated Gate Bipolar Transistor) and power MOSFET ( Metal Oxide Semiconductor Field Effect Transistor) etc. as substitute for hydrogen thyratrons.

用IGBT（绝缘栅双极性晶体管）和功率MOSFET（金属氧化物半导体场效应管）等固态功率开关器件代替氘闸流管开关是脉冲调制器技术的最新发展方向。

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Silicon insulated gate fet Cable Pipe-a protection casing pipe used for special purposes when crossing roads or bridges, with good characteristics of being acidproof and alkaliproof, and good performance on electric insulation and electromagnetic shielding.

硅绝缘栅场效应晶体管电缆管&为电缆过路、过桥专用保护套管，具有良好的耐酸碱和电气绝缘性能，电磁屏蔽性能。

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Demonstration of Insulated Gate Bipolar Transistor ICs with Drive Protection

绝缘栅双极晶体管驱动保护集成电路设计

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The system adopted insulated gate bipolar transistor ( IGBT) as its main circuit and pulse-width modulating ( PWM) technology.

该系统采用IGBT（绝缘栅双极型晶体管）器件，PWM（脉宽调制）控制技术。

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It has insulated gate MOS devices and the ability to quickly switch.

它具有MOS器件 栅极绝缘和快速开关的能力.

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this way of passivating gives better performance and greater stability of bipolar transistors and insulated gate field-effect transistors in integrated circuits.

该项工作导致集成电路用的双极晶体管和绝缘栅场效应晶体管的性能和稳定性得到提高。

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The composite insulated Gate Bipolar Transistor model. Gate TurnOff Thyristor model and MOSFET Control Thyristor model are presented as examples of the composite model method, together with simulations and experimental results.

作为应用组合模型原理的实例，文中给出了组合绝缘门根晶体管模型、组合门极可关断晶闸管模型和组合MOSFET控制晶闸管模型，并和实际器件进行比较。

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Combined with the design of brushless DC electric motor controller, a method to estimate power loss of IGBT ( Insulated Gate Bipolar Transistor) based on PSPICE simulation is proposed.

结合无刷直流电机控制器的设计，提出了基于PSPICE仿真的绝缘栅双极型晶体管IGBT（Insulated Gate Bipolar Transistor）功率损耗的估算方法。

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